Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFW630BTM-FP001
Part Number | IRFW630BTM-FP001 |
Datasheet | IRFW630BTM-FP001 datasheet |
Description | MOSFET N-CH 200V 9A D2PAK |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 72W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |