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Part Number | CDBDSC5650-G |
Datasheet | CDBDSC5650-G datasheet |
Description | DIODE SILICON CARBIDE POWER SCHO |
Manufacturer | Comchip Technology |
Series | - |
Part Status | Active |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 650V |
Current - Average Rectified (Io) | 21.5A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 5A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 100µA @ 650V |
Capacitance @ Vr, F | 424pF @ 0V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | D-PAK (TO-252) |
Operating Temperature - Junction | -55°C ~ 175°C |