Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSM180C12P2E202
Part Number | BSM180C12P2E202 |
Description | BSM180C12P2E202 IS A SIC SILICO |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) @ 25°C | 204A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 4V @ 35.2mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | +22V, -6V |
Input Capacitance (Ciss) (Max) @ Vds | 20000pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1360W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | Module |
Package / Case | Module |