
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / ULN2803AFWG,C,EL

| Part Number | ULN2803AFWG,C,EL |
| Datasheet | ULN2803AFWG,C,EL datasheet |
| Description | TRANS 8NPN DARL 50V 0.5A 18SOL |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Obsolete |
| Transistor Type | 8 NPN Darlington |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
| Power - Max | 1.31W |
| Frequency - Transition | - |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 18-SOIC (0.295", 7.50mm Width) |
| Supplier Device Package | 18-SOL |