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Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / ULN2803AFWG,C,EL
Part Number | ULN2803AFWG,C,EL |
Datasheet | ULN2803AFWG,C,EL datasheet |
Description | TRANS 8NPN DARL 50V 0.5A 18SOL |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Obsolete |
Transistor Type | 8 NPN Darlington |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
Power - Max | 1.31W |
Frequency - Transition | - |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 18-SOIC (0.295", 7.50mm Width) |
Supplier Device Package | 18-SOL |