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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / APTM100VDA35T3G
Part Number | APTM100VDA35T3G |
Description | MOSFET 2N-CH 1000V 22A SP3 |
Manufacturer | Microsemi Corporation |
Series | POWER MOS 7® |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 22A |
Rds On (Max) @ Id, Vgs | 420 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 186nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5200pF @ 25V |
Power - Max | 390W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP3 |
Supplier Device Package | SP3 |