Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / NJD35N04T4G
Part Number | NJD35N04T4G |
Datasheet | NJD35N04T4G datasheet |
Description | TRANS NPN DARL 350V 4A DPAK |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 4A |
Voltage - Collector Emitter Breakdown (Max) | 350V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 20mA, 2A |
Current - Collector Cutoff (Max) | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2A, 2V |
Power - Max | 45W |
Frequency - Transition | 90MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK |