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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI7655DN-T1-GE3
Part Number | SI7655DN-T1-GE3 |
Datasheet | SI7655DN-T1-GE3 datasheet |
Description | MOSFET P-CH 20V 40A PPAK 1212 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.6 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 225nC @ 10V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 6600pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 4.8W (Ta), 57W (Tc) |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® 1212-8S (3.3x3.3) |
Package / Case | 8-PowerVDFN |