Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TSM033NB04CR RLG
Part Number | TSM033NB04CR RLG |
Datasheet | TSM033NB04CR RLG datasheet |
Description | MOSFET SINGLE N-CHANNEL TRENCH |
Manufacturer | Taiwan Semiconductor Corporation |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 121A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 77nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5022pF @ 20V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 107W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PDFN (5x6) |
Package / Case | 8-PowerTDFN |