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Product Introduction
IPB65R099C6ATMA1
- Part Number
- IPB65R099C6ATMA1
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET N-CH 650V 38A TO263
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- CoolMOS™
- Quantity
- 9248pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | IPB65R099C6ATMA1 |
| Description | MOSFET N-CH 650V 38A TO263 |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 99 mOhm @ 12.8A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 127nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2780pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263AB) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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