Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQI9N08LTU
Part Number | FQI9N08LTU |
Datasheet | FQI9N08LTU datasheet |
Description | MOSFET N-CH 80V 9.3A I2PAK |
Manufacturer | ON Semiconductor |
Series | QFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 210 mOhm @ 4.65A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.1nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 40W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |