Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRF5801TRPBF
Part Number | IRF5801TRPBF |
Datasheet | IRF5801TRPBF datasheet |
Description | MOSFET N-CH 200V 600MA 6-TSOP |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 360mA, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 88pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Micro6™(TSOP-6) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |