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Product Introduction

IPB024N10N5ATMA1

Part Number
IPB024N10N5ATMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 100V 180A TO263-7
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
OptiMOS™
Quantity
740pcs Stock Available.

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Product Specifications

Part Number IPB024N10N5ATMA1
Description MOSFET N-CH 100V 180A TO263-7
Manufacturer Infineon Technologies
Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.4 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 3.8V @ 183µA
Gate Charge (Qg) (Max) @ Vgs 138nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10200pF @ 50V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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