Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD35N10S3L26ATMA1
Product Introduction
IPD35N10S3L26ATMA1
- Part Number
- IPD35N10S3L26ATMA1
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET N-CH 100V 35A TO252-3
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- OptiMOS™
- Quantity
- 2636pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | IPD35N10S3L26ATMA1 |
| Datasheet | IPD35N10S3L26ATMA1 datasheet |
| Description | MOSFET N-CH 100V 35A TO252-3 |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 39µA |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-11 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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