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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPH3208PD
Part Number | TPH3208PD |
Datasheet | TPH3208PD datasheet |
Description | GANFET N-CH 650V 20A TO220 |
Manufacturer | Transphorm |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 13A, 8V |
Vgs(th) (Max) @ Id | 2.6V @ 300µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 8V |
Vgs (Max) | ±18V |
Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 96W (Tc) |
Operating Temperature | -55°C ~ 150°C |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |