Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / FGA6540WDF
Part Number | FGA6540WDF |
Datasheet | FGA6540WDF datasheet |
Description | IGBT 650V 80A 238W TO-3PN |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 80A |
Current - Collector Pulsed (Icm) | 120A |
Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
Power - Max | 238W |
Switching Energy | 1.37mJ (on), 250µJ (off) |
Input Type | Standard |
Gate Charge | 55.5nC |
Td (on/off) @ 25°C | 16.8ns/54.4ns |
Test Condition | 400V, 40A, 6 Ohm, 15V |
Reverse Recovery Time (trr) | 101ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Supplier Device Package | TO-3PN |