Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / APT29F80J
Part Number | APT29F80J |
Datasheet | APT29F80J datasheet |
Description | MOSFET N-CH 800V 31A SOT-227 |
Manufacturer | Microsemi Corporation |
Series | POWER MOS 8™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 210 mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 303nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 9326pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 543W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | ISOTOP® |
Package / Case | SOT-227-4, miniBLOC |