Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFHS8342TR2PBF
Part Number | IRFHS8342TR2PBF |
Datasheet | IRFHS8342TR2PBF datasheet |
Description | MOSFET N-CH 30V 8.8A PQFN |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta), 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 8.7nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 2.1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TSDSON-6 |
Package / Case | 6-PowerVDFN |