Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTA113EE,115
Part Number | PDTA113EE,115 |
Datasheet | PDTA113EE,115 datasheet |
Description | TRANS PREBIAS PNP 150MW SC75 |
Manufacturer | NXP USA Inc. |
Series | - |
Part Status | Obsolete |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 40mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 1.5mA, 30mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Supplier Device Package | SC-75 |