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Part Number | 1N6663US |
Datasheet | 1N6663US datasheet |
Description | DIODE GEN PURP 600V 500MA D5A |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 500mA (DC) |
Voltage - Forward (Vf) (Max) @ If | 1V @ 400mA |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 50nA @ 600V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, A |
Supplier Device Package | D-5A |
Operating Temperature - Junction | -65°C ~ 175°C |