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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPCC8093,L1Q
Part Number | TPCC8093,L1Q |
Datasheet | TPCC8093,L1Q datasheet |
Description | X35 PB-F POWER MOSFET TRANSISTOR |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVII |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 5.8 mOhm @ 10.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 1860pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1.9W (Ta), 30W (Tc) |
Operating Temperature | 150°C |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Package / Case | 8-PowerVDFN |