Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPCC8093,L1Q

Product Introduction

TPCC8093,L1Q

Part Number
TPCC8093,L1Q
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
X35 PB-F POWER MOSFET TRANSISTOR
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
U-MOSVII
Quantity
382pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number TPCC8093,L1Q
Datasheet TPCC8093,L1Q datasheet
Description X35 PB-F POWER MOSFET TRANSISTOR
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVII
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 5.8 mOhm @ 10.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1860pF @ 10V
FET Feature -
Power Dissipation (Max) 1.9W (Ta), 30W (Tc)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN

Latest Products for Transistors - FETs, MOSFETs - Single

SN7002WH6433XTMA1

Infineon Technologies

MOSFET N-CH 60V 230MA SOT-323

SPD02N50C3BTMA1

Infineon Technologies

LOW POWERLEGACY

SPD04N60C3

Infineon Technologies

MOSFET N-CH 600V 4.5A TO252-3

SPD07N60C3

Infineon Technologies

MOSFET N-CH 600V 7.3A TO252-3

SPD07N60C3ATMA1

Infineon Technologies

LOW POWERLEGACY

SPP02N60C3XKSA1

Infineon Technologies

LOW POWERLEGACY