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| Part Number | TPCC8093,L1Q |
| Datasheet | TPCC8093,L1Q datasheet |
| Description | X35 PB-F POWER MOSFET TRANSISTOR |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSVII |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 5.8 mOhm @ 10.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1860pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta), 30W (Tc) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Package / Case | 8-PowerVDFN |