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Part Number | NTD5C648NLT4G |
Datasheet | NTD5C648NLT4G datasheet |
Description | T6 60V LL DPAK |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 91A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.1 mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 4.4W (Ta), 76W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK (SINGLE GAUGE) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |