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Part Number | TPC8036-H(TE12L,QM |
Datasheet | TPC8036-H(TE12L,QM datasheet |
Description | MOSFET N-CH 30V 18A 8-SOIC |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVI-H |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4600pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOP (5.5x6.0) |
Package / Case | 8-SOIC (0.173", 4.40mm Width) |