Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTU12N06T
Part Number | IXTU12N06T |
Datasheet | IXTU12N06T datasheet |
Description | MOSFET N-CH 60V 12A TO-251 |
Manufacturer | IXYS |
Series | TrenchMV™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 3.4nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 256pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 33W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251 |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |