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Part Number | TPCC8006-H(TE12LQM |
Datasheet | TPCC8006-H(TE12LQM datasheet |
Description | MOSFET N-CH 30V 22A 8TSON |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVI-H |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta), 27W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Package / Case | 8-PowerVDFN |