
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSH111BKR
Part Number | BSH111BKR |
Datasheet | BSH111BKR datasheet |
Description | MOSFET N-CH 55V SOT-23 |
Manufacturer | Nexperia USA Inc. |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 210mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id | 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.5nC @ 4.5V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 302mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236AB |
Package / Case | TO-236-3, SC-59, SOT-23-3 |