Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / STGD6M65DF2
Part Number | STGD6M65DF2 |
Datasheet | STGD6M65DF2 datasheet |
Description | TRENCH GATE FIELD-STOP IGBT M S |
Manufacturer | STMicroelectronics |
Series | M |
Part Status | Active |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 12A |
Current - Collector Pulsed (Icm) | 24A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 6A |
Power - Max | 88W |
Switching Energy | 36µJ (on), 200µJ (off) |
Input Type | Standard |
Gate Charge | 21.2nC |
Td (on/off) @ 25°C | 15ns/90ns |
Test Condition | 400V, 6A, 22 Ohm, 15V |
Reverse Recovery Time (trr) | 140ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK |