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| Part Number | SCT2160KEC |
| Datasheet | SCT2160KEC datasheet |
| Description | MOSFET N-CH 1200V 22A TO-247 |
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 208 mOhm @ 7A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 18V |
| Vgs (Max) | +22V, -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 800V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |