Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / DMN60H080DS-7
Part Number | DMN60H080DS-7 |
Datasheet | DMN60H080DS-7 datasheet |
Description | MOSFET N-CH 600V 80MA SOT23 |
Manufacturer | Diodes Incorporated |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 80mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 100 Ohm @ 60mA, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 1.7nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1.1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |