Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
2N6784U |
Datasheet |
2N6784U datasheet |
Description |
MOSFET N-CH 200V 18LCC |
Manufacturer |
Microsemi Corporation |
Series |
- |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
200V |
Current - Continuous Drain (Id) @ 25°C |
2.25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
1.5 Ohm @ 1.5A, 0V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
8.6nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
- |
FET Feature |
- |
Power Dissipation (Max) |
800mW (Ta), 15W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
18-ULCC (9.14x7.49) |
Package / Case |
18-CLCC |
Latest Products for Transistors - FETs, MOSFETs - Single
Renesas Electronics America
MOSFET P-CH 30V 21A 8HWSON
Renesas Electronics America
MOSFET P-CH 30V 17A 8HWSON
Renesas Electronics America
MOSFET N-CH 30V 34A 8HVSON
Diodes Incorporated
MOSFET BVDSS 101V-250V SOT223 T
Diodes Incorporated
MOSFET N-CH 20V 4.9A SOT23-3
Diodes Incorporated
MOSFET N-CH 30V 3.9A SOT23-3