Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTM5N100
Part Number | IXTM5N100 |
Datasheet | IXTM5N100 datasheet |
Description | POWER MOSFET TO-3 |
Manufacturer | IXYS |
Series | - |
Part Status | Last Time Buy |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.4 Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 180W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-204AA |
Package / Case | TO-204AA, TO-3 |