Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTD513ZETL
Part Number | DTD513ZETL |
Datasheet | DTD513ZETL datasheet |
Description | TRANS PREBIAS NPN 150MW EMT3 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 260MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Supplier Device Package | EMT3 |