Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / PHD16N03LT,118
Part Number | PHD16N03LT,118 |
Datasheet | PHD16N03LT,118 datasheet |
Description | MOSFET N-CH 30V 16A DPAK |
Manufacturer | NXP USA Inc. |
Series | TrenchMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 67 mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 10V |
Vgs (Max) | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 32.6W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |