Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI7958DP-T1-GE3
Part Number | SI7958DP-T1-GE3 |
Datasheet | SI7958DP-T1-GE3 datasheet |
Description | MOSFET 2N-CH 40V 7.2A PPAK SO-8 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 7.2A |
Rds On (Max) @ Id, Vgs | 16.5 mOhm @ 11.3A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.4W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 Dual |
Supplier Device Package | PowerPAK® SO-8 Dual |