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Product Introduction

SI4477DY-T1-GE3

Part Number
SI4477DY-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET P-CH 20V 26.6A 8-SOIC
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
5161pcs Stock Available.

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Product Specifications

Part Number SI4477DY-T1-GE3
Description MOSFET P-CH 20V 26.6A 8-SOIC
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 26.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 6.2 mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 10V
FET Feature -
Power Dissipation (Max) 3W (Ta), 6.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

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