Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
IRF630L |
Datasheet |
IRF630L datasheet |
Description |
MOSFET N-CH 200V 9A TO-262 |
Manufacturer |
Vishay Siliconix |
Series |
- |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
200V |
Current - Continuous Drain (Id) @ 25°C |
9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
400 mOhm @ 5.4A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
- |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
I2PAK |
Package / Case |
TO-262-3 Long Leads, I²Pak, TO-262AA |
Latest Products for Transistors - FETs, MOSFETs - Single
Vishay Siliconix
MOSFET N-CH 100V 50A TO220AB
Vishay Siliconix
MOSFET P-CH 60V 9.2A TO220AB
Vishay Siliconix
MOSFET N-CH 20V 60A TO220AB
Vishay Siliconix
MOSFET N-CH 60V 60A TO220AB
Vishay Siliconix
MOSFET N-CH 60V 60A TO220AB
Vishay Siliconix
MOSFET N-CH 100V 60A TO220AB