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Part Number | TPC8022-H(TE12LQ,M |
Datasheet | TPC8022-H(TE12LQ,M datasheet |
Description | MOSFET N-CH 40V 7.5A SOP8 2-6J1B |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 27 mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOP (5.5x6.0) |
Package / Case | 8-SOIC (0.173", 4.40mm Width) |