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| Part Number | TK12A55D(STA4,Q,M) | 
| Datasheet | TK12A55D(STA4,Q,M) datasheet | 
| Description | MOSFET N-CH 550V 12A TO-220SIS | 
| Manufacturer | Toshiba Semiconductor and Storage | 
| Series | π-MOSVII | 
| Part Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 550V | 
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Rds On (Max) @ Id, Vgs | 570 mOhm @ 6A, 10V | 
| Vgs(th) (Max) @ Id | 4V @ 1mA | 
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V | 
| Vgs (Max) | ±30V | 
| Input Capacitance (Ciss) (Max) @ Vds | 1550pF @ 25V | 
| FET Feature | - | 
| Power Dissipation (Max) | 45W (Tc) | 
| Operating Temperature | 150°C (TJ) | 
| Mounting Type | Through Hole | 
| Supplier Device Package | TO-220SIS | 
| Package / Case | TO-220-3 Full Pack |