Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SIZF906DT-T1-GE3
Part Number | SIZF906DT-T1-GE3 |
Datasheet | SIZF906DT-T1-GE3 datasheet |
Description | MOSFET 2 N-CH 30V 60A POWERPAIR |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® Gen IV |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V, 92nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 15V, 8200pF @ 15V |
Power - Max | 38W (Tc), 83W (Tc) |
Operating Temperature | -55°C ~ 150°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Supplier Device Package | 8-PowerPair® (6x5) |