Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI2306BDS-T1-GE3

Product Introduction

SI2306BDS-T1-GE3

Part Number
SI2306BDS-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CH 30V 3.16A SOT23-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
9497pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number SI2306BDS-T1-GE3
Description MOSFET N-CH 30V 3.16A SOT23-3
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 47 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 305pF @ 15V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3

Latest Products for Transistors - FETs, MOSFETs - Single

BSS126 E6906

Infineon Technologies

MOSFET N-CH 600V 0.021A SOT-23

BSS126H6327XTSA1

Infineon Technologies

MOSFET N-CH 600V 0.021A SOT23

BSS126H6906XTSA1

Infineon Technologies

MOSFET N-CH 600V 0.021A SOT23

BSS126L6327HTSA1

Infineon Technologies

MOSFET N-CH 600V 0.021A SOT-23

BSS126L6906HTSA1

Infineon Technologies

MOSFET N-CH 600V 0.021A SOT-23

BSS127 E6327

Infineon Technologies

MOSFET N-CH 600V 0.021A SOT-23

Related Products