Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPI60R099CPAAKSA1
Part Number | IPI60R099CPAAKSA1 |
Datasheet | IPI60R099CPAAKSA1 datasheet |
Description | MOSFET N-CH 60V 31A TO-262 |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 105 mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 255W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |