Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SQ1912AEEH-T1_GE3
Part Number | SQ1912AEEH-T1_GE3 |
Datasheet | SQ1912AEEH-T1_GE3 datasheet |
Description | MOSFET 2N-CH 20V POWERPAK SC70-6 |
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) |
Rds On (Max) @ Id, Vgs | 280 mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 1.25nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 27pF @ 10V |
Power - Max | 1.5W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SC-70-6 Dual |
Supplier Device Package | PowerPAK® SC-70-6 Dual |