Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / 2SC5227A-5-TB-E

Product Introduction

2SC5227A-5-TB-E

Part Number
2SC5227A-5-TB-E
Manufacturer/Brand
ON Semiconductor
Description
RF TRANS NPN 10V 7GHZ 3CP
Category
Transistors - Bipolar (BJT) - RF
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
3179pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number 2SC5227A-5-TB-E
Datasheet 2SC5227A-5-TB-E datasheet
Description RF TRANS NPN 10V 7GHZ 3CP
Manufacturer ON Semiconductor
Series -
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 10V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1dB @ 1GHz
Gain 12dB
Power - Max 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 135 @ 20mA, 5V
Current - Collector (Ic) (Max) 70mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package 3-CP

Latest Products for Transistors - Bipolar (BJT) - RF

MRF8372R1

Microsemi Corporation

RF TRANS NPN 16V 870MHZ 8SO

MRF8372R2

Microsemi Corporation

RF TRANS NPN 16V 870MHZ 8SO

HFA3096BZ

Renesas Electronics America Inc.

RF TRANS 12/15V 5.5GHZ 16SOIC

HFA3127BZ

Renesas Electronics America Inc.

RF TRANS 5 NPN 12V 8GHZ 16SOIC

HFA3127BZ96

Renesas Electronics America Inc.

RF TRANS 5 NPN 12V 8GHZ 16SOIC

HFA3096BZ96

Renesas Electronics America Inc.

RF TRANS 12/15V 5.5GHZ 16SOIC