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Part Number | IPW60R090CFD7XKSA1 |
Datasheet | IPW60R090CFD7XKSA1 datasheet |
Description | HIGH POWERNEW |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 11.4A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 570µA |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2103pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |