Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / SBC856BDW1T3G
Part Number | SBC856BDW1T3G |
Datasheet | SBC856BDW1T3G datasheet |
Description | TRANS 2PNP 65V 0.1A SOT-363 |
Manufacturer | ON Semiconductor |
Series | Automotive, AEC-Q101 |
Part Status | Active |
Transistor Type | 2 PNP (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 65V |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
Power - Max | 380mW |
Frequency - Transition | 100MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |