Home / Products / Integrated Circuits (ICs) / Memory / BQ4013MA-120

Product Introduction

BQ4013MA-120

Part Number
BQ4013MA-120
Manufacturer/Brand
Texas Instruments
Description
IC NVSRAM 1M PARALLEL 32DIP
Category
Memory
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
5677pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number BQ4013MA-120
Datasheet BQ4013MA-120 datasheet
Description IC NVSRAM 1M PARALLEL 32DIP
Manufacturer Texas Instruments
Series -
Part Status Obsolete
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 1Mb (128K x 8)
Clock Frequency -
Write Cycle Time - Word, Page 120ns
Access Time 120ns
Memory Interface Parallel
Voltage - Supply 4.75V ~ 5.5V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Through Hole
Package / Case 32-DIP Module (0.61", 15.49mm)
Supplier Device Package 32-DIP Module (18.42x42.8)

Latest Products for Memory

W632GG6KB-11 TR

Winbond Electronics

IC DRAM 2G PARALLEL 96WBGA

W632GG6KB-12

Winbond Electronics

IC DRAM 2G PARALLEL 96WBGA

W632GG6KB-12 TR

Winbond Electronics

IC DRAM 2G PARALLEL 96WBGA

W632GG6KB-15

Winbond Electronics

IC DRAM 2G PARALLEL 96WBGA

W632GG6KB-15 TR

Winbond Electronics

IC DRAM 2G PARALLEL 96WBGA

W632GG6KB-18

Winbond Electronics

IC DRAM 2G PARALLEL 533MHZ