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Product Introduction

IPD079N06L3GBTMA1

Part Number
IPD079N06L3GBTMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 60V 50A TO252-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
OptiMOS™
Quantity
15140pcs Stock Available.

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Product Specifications

Part Number IPD079N06L3GBTMA1
Datasheet IPD079N06L3GBTMA1 datasheet
Description MOSFET N-CH 60V 50A TO252-3
Manufacturer Infineon Technologies
Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.9 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 34µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 30V
FET Feature -
Power Dissipation (Max) 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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