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| Part Number | BSZ15DC02KDHXTMA1 |
| Datasheet | BSZ15DC02KDHXTMA1 datasheet |
| Description | MOSFET N/P-CH 20V 8TDSON |
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, HEXFET® |
| Part Status | Active |
| FET Type | N and P-Channel Complementary |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A, 3.2A |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 5.1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 110µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 419pF @ 10V |
| Power - Max | 2.5W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PG-TSDSON-8-FL |