Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SIZ710DT-T1-GE3
Part Number | SIZ710DT-T1-GE3 |
Datasheet | SIZ710DT-T1-GE3 datasheet |
Description | MOSFET 2N-CH 20V 16A POWERPAIR |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 16A, 35A |
Rds On (Max) @ Id, Vgs | 6.8 mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 820pF @ 10V |
Power - Max | 27W, 48W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-PowerPair™ |
Supplier Device Package | 6-PowerPair™ |