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Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N6630US
Part Number | 1N6630US |
Datasheet | 1N6630US datasheet |
Description | DIODE GEN PURP 900V 1.4A D5B |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 900V |
Current - Average Rectified (Io) | 1.4A |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 3A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 50ns |
Current - Reverse Leakage @ Vr | 4µA @ 100V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | E-MELF |
Supplier Device Package | D-5B |
Operating Temperature - Junction | -65°C ~ 150°C |