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| Part Number | 1N6630US | 
| Datasheet | 1N6630US datasheet | 
| Description | DIODE GEN PURP 900V 1.4A D5B | 
| Manufacturer | Microsemi Corporation | 
| Series | - | 
| Part Status | Active | 
| Diode Type | Standard | 
| Voltage - DC Reverse (Vr) (Max) | 900V | 
| Current - Average Rectified (Io) | 1.4A | 
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 3A | 
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | 
| Reverse Recovery Time (trr) | 50ns | 
| Current - Reverse Leakage @ Vr | 4µA @ 100V | 
| Capacitance @ Vr, F | - | 
| Mounting Type | Surface Mount | 
| Package / Case | E-MELF | 
| Supplier Device Package | D-5B | 
| Operating Temperature - Junction | -65°C ~ 150°C |