Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N6251T1
Part Number | JAN2N6251T1 |
Datasheet | JAN2N6251T1 datasheet |
Description | TRANS NPN 350V 10A TO-3 |
Manufacturer | Microsemi Corporation |
Series | Military, MIL-PRF-19500/510 |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 10A |
Voltage - Collector Emitter Breakdown (Max) | 350V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.67A, 10A |
Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 6 @ 10A, 3V |
Power - Max | 6W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-254-3, TO-254AA (Straight Leads) |
Supplier Device Package | TO-254AA |